advanced power p-channel enhancement mode electronics corp. power mosfet low gate charge bv dss -30v simple drive requirement r ds(on) 9m lower on-resistance i d -48a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 6 5 /w data and specifications subject to change without n otice parameter total power dissipation operating junction temperature range storage temperature range linear derating factor thermal data drain current, v gs @ 10v -30 pulsed drain current 1 300 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v ap6679gi-hf rating -30 201501293 halogen-free product 1 + 25 -48 0.25 31.3 -55 to 150 -55 to 150 g d s g d s to-220cfm(i) ap6679 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220cfm package is widely preferred for all commercia l- industrial through hole applications. the mold compound pr ovides a high isolation voltage capability and low thermal resista nce between the tab and the external heat-sink. .
ap6679gi-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m v gs =-4.5v, i d =-24a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 43 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-24v, v gs =0v - - -250 ua i gss halogen-free v gs = + 25, v ds =0v - - + 100 na q g total gate charge i d =-30a - 40 67 nc q gs gate-source charge v ds =-25v - 8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 28 - nc t d(on) turn-on delay time v ds =-15v - 15 - ns t r rise time i d =-30a - 75 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 50 - ns t f fall time r d =0.5 - 90 - ns c iss input capacitance v gs =0v - 3100 4590 pf c oss output capacitance v ds =-25v - 930 - pf c rss reverse transfer capacitance f=1.0mhz - 690 - pf r g gate resistance f=1.0mhz - 2.7 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-30a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-24a, v gs =0v, - 47 - ns q rr reverse recovery charge di/dt=-100a/s - 45 - nc notes: 1.pulse width limited max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 .
ap6679gi-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 5 15 25 35 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -24a t c =25 0 70 140 210 280 0 1 2 3 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-30a v g =-10v 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v -4.5v v g =-3.0v .
ap6679gi-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 4 8 12 16 0 20 40 60 80 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -30a v ds = -25v 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse .
marking information 5 ap6679gi-hf part number package code date code (ywwsss) y last digit of the year ww week sss sequence meet rohs requirement for low voltage mosfet only 6679gi ywwsss .
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